Abstract

AbstractCubic β-SiC was processed under conditions of self-propagating high-temperature synthesis, based on the exothermic reaction between elemental Si and C powders. The set up for the synthesis of SiC using a mixture of Si and C is described. X-Ray and Raman spectroscopy studies were performed to characterize the quality of the β-SiC produced using the new set up. Scanning Electron Microscopy and Transmission Electron Microscopy studies were also carried out to study the mechanism of the formation of β-SiC from the elemental powders. The density of the compact and grain size of the graphite was found to be critical in the formation of the SiC. Diamond seeds were also implanted on the SiC pellet while compaction and this implanted diamond provided the necessary seed for the growth of a thick diamond film. The adhesion of the film is good because of its growth from the implanted diamond. Diamond films were grown on SiC using HFCVD. The quality and the adhesion of the diamond films on SiC were studied using SEM.

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