Abstract
Ordered InAs quantum dot (QD) arrays are formed by self-organized anisotropic strain engineering of an InAs/InGaAsP superlattice template on truncated InP pyramids grown by selective-area chemical beam epitaxy. The ordering is changed from one-dimensional on planar substrates to two-dimensional in the limited pyramid top surface areas. Upon shrinking the pyramid top surface area, the photoluminescence linewidth of the QD arrays narrows. This indicates improved size uniformity of the QDs when self-organized in site-controlled, local arrays.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
