Abstract
Synergistic effect of nanostructuration and boron doping allows sub-bandgap electron acceptor states in diamond materials to be controlled.
Highlights
Sneha Choudhury,ab Benjamin Kiendl,c Jian Ren,ad Fang Gao, ‡e Peter Knittel, e Christoph Nebel,e Amelie Venerosy,f Hugues Girard, f Jean-Charles Arnault,f Anke Krueger, c Karin Larsson*g and Tristan Petit *a
Supported by density functional theory calculations, we demonstrate that boron close to the surfaces of diamond crystallites induce acceptor levels in the band gap, which are dependent on the diamond morphology
The density of unoccupied and occupied states in the diamond material are evidenced by X-ray absorption (XA) and XE spectra respectively that are presented in this paper
Summary
Sneha Choudhury,ab Benjamin Kiendl,c Jian Ren,ad Fang Gao, ‡e Peter Knittel, e Christoph Nebel,e Amelie Venerosy,f Hugues Girard, f Jean-Charles Arnault,f Anke Krueger, c Karin Larsson*g and Tristan Petit *a. One way to overcome this challenge would be to introduce surface states within the band gap of diamonds so as to facilitate defectbased transitions in the material.[20,21,22,23,24] This could be a potential pathway by which photons of lower energy can be harnessed to realize the photoexcitation of electrons to the conduction band in the material To this aim, boron doping has been investigated as boron is a trivalent atom with a smaller atomic radius which enables its easy incorporation in the diamond lattice.[25,26] Over the last 30 years,[27] boron doped diamond has been synthesized in different forms such as single crystal (SCD), polycrystalline (PCD) or nanocrystalline lm electrode,[28,29,30] diamond foam (Dfoam) electrodes,[31,32] and nanodiamonds (ND)[33] using primarily CVD34–36 and HPHT26,37,38 methods
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