Abstract

The atomic structure of various indium adlayers at submonolayer coverages on W(110) is investigated by a density functional theory (DFT) approach as well as by analysis of low-energy electron diffraction intensities (LEED $I∕V$). Single-atom adsorption is studied by DFT, with the result that adsorption at the pseudo-fourfold coordinated sites of the W(110) is most preferable, followed by bonding to the pseudo-threefold and twofold short-bridge sites. Both theory and experiment reveal that for the $(3\ifmmode\times\else\texttimes\fi{}1)$ structure, which corresponds to a coverage of 0.33 monolayer (ML), indium atoms occupy exclusively pseudo-fourfold coordinated sites, while for the $(1\ifmmode\times\else\texttimes\fi{}4)$ phase (0.75 ML coverage) and $(1\ifmmode\times\else\texttimes\fi{}5)$ phase (0.80 ML coverage), pseudo-threefold and twofold short-bridge sites are also occupied. According to DFT, the $(1\ifmmode\times\else\texttimes\fi{}4)$ structure is the most stable one, closely followed by the $(1\ifmmode\times\else\texttimes\fi{}5)$ structure. Analysis of DFT studies on free monolayers of In reveals the significant influence of In-In bonding on the formation of these adlayer structures. The low-coverage $(3\ifmmode\times\else\texttimes\fi{}1)$ structure is energetically the least favorable one, in agreement with the experimental finding that the $(3\ifmmode\times\else\texttimes\fi{}1)$ structure is only metastable and transforms with increasing time or upon annealing into islands of $(1\ifmmode\times\else\texttimes\fi{}4)$ patterns. In order to investigate whether the $(3\ifmmode\times\else\texttimes\fi{}1)$ structure might be stabilized by contaminants, DFT calculations were also performed for coadsorbing hydrogen and oxygen with indium on W(110). However, the $(3\ifmmode\times\else\texttimes\fi{}1)$ structure always remains metastable. Furthermore, we find that phase separated regions of oxygen patches and $(1\ifmmode\times\else\texttimes\fi{}4)$ In islands are stabilized by about $1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$/atom relative to mixed $(3\ifmmode\times\else\texttimes\fi{}1)$ $\mathrm{In}+\mathrm{O}$ configurations. This is in very good agreement with the experimental observation that the $(3\ifmmode\times\else\texttimes\fi{}1)\ensuremath{\rightarrow}(1\ifmmode\times\else\texttimes\fi{}4)$ transition can be triggered by additional oxygen.

Highlights

  • Indium and tungsten are metals with very different physical properties

  • Due to the softness of indium, one might expect that indium likes to grow on tungsten in a pseudomorphic manner, with In atoms occupying the energetically most favorable singleatom adsorption sites, even if this requires some change of the In-In bond length as compared to the bulk

  • Experiments where performed in an UHV chamber with a base pressure of 1 ϫ 10−10 mbar equipped with standard facilities for sample preparation and a video-LEED systemEr

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Summary

Introduction

Indium and tungsten are metals with very different physical properties. Tungsten has the highest melting point of all metals3683 K, while indium melts already at 430 K. While tungsten is hard and brittle, in particular, when carbon and oxygen impurities are present. As will be shown in this paper, this assumption does not hold due to the rather large lattice misfitthe next-neighbor In-In distance exceeds that of tungsten by 18.6%͒. Both materials adopt different crystallographic structures in their respective bulk phases. Tungsten crystallizes in the body-centered cubic structure, while indium is one of the few materials with a body-centered tetragonal structure. We will always use the fct notation to specify the crystallographic directions of indium

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