Abstract
Wafer bonding with high quality (such as high strength, void-less interface, and low-resistance vertical electrical interconnects) obtained at low temperatures is highly desired for 3D integration of microsystems. This paper reports a combined surface activated bonding (SAB) technique for improvement of the bonding quality of SiO2-SiO2 pairs bonded at 200°C. The present bonding technique employs a combination of surface irradiation using a Si-containing Ar beam and prebonding attach-detach procedure prior to bonding in vacuum, followed by postbonding annealing in ambient pressure. The bonding method has also been found effective for SiO2-SiNx and Cu-Cu bonding at 200°C. Results of bonding strength measurements, transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) observations are reported and discussed to understand the present technique. The feasibility of this bonding technique for Cu/SiO2 and Cu/SiO2/SiNx hybrid bonding is also discussed.
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