Abstract
We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium temperatures. The diagonal resistance was measured with the magnetic field fixed at the extrema of the radiation-induced magnetoresistance oscillations, as the microwave power was varied at a number of microwave polarization angles. The results indicate a nonlinear relation between the oscillatory peak or valley magnetoresistance and the microwave power, as well as a cosine square relation between the oscillatory peak or valley magnetoresistance and the microwave polarization angle. The main features are briefly compared with the predictions of existing models.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have