Abstract
Because of its small band gap, cadmium mercury telluride (CMT) is widely used as a material for IR detectors. The constancy and long-time stability of its composition, as well as a low impurity concentration are the crucial requirements for successful applications of this semiconductor. Anodic oxide layers are frequently used for passivation of the CMT surface. In the present investigation, the surface and in-depth composition of anodic oxide layers with different thickness from 20 to 230 nm on Cd0.2Hg0.8Te has been characterized by quasi simultaneous secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).
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