Abstract
As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properties. Likewise, an increased local temperature due to Joule heating at contacts and the formation of hot spots may put limits on device integration. Therefore, being able to observe profiles of both electronic and thermal device properties at the nanoscale is important. Here, we show measurements by scanning thermal and Kelvin probe force microscopy of the same 60 nm diameter indium arsenide nanowire in operation. The observed temperature along the wire is substantially elevated near the contacts and deviates from the bell-shaped temperature profile one would expect from homogeneous heating. Voltage profiles acquired by Kelvin probe force microscopy not only allow us to determine the electrical nanowire conductivity, but also to identify and quantify sizable and non-linear contact resistances at the buried nanowire–electrode interfaces. Complementing these data with thermal measurements, we obtain a device model further permitting separate extraction of the local thermal nanowire and interface conductivities.
Highlights
Electronic and thermal properties of nanoscale devices are innately coupled
We demonstrate high-resolution measurements of an operating indium arsenide (InAs) nanowire (NW) by scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KFM), and how the information obtained by both methods can be combined to extract quantitative thermal and electronic device properties
We have shown that KFM and SThM measurements of the same nanowire device are a powerful combination for a complete electronic and thermal characterization
Summary
Electronic and thermal properties of nanoscale devices are innately coupled. The charge carriers in most conductors release energy by scattering at defects or phonons resulting in Joule heating. Complementing these data with thermal measurements, we obtain a device model further permitting separate extraction of the local thermal nanowire and interface conductivities.
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