Abstract
Combined photoreflectance/photoluminescence measurements are proposed for the study of the stability of semiconductor surface passivation. With such an approach, laser action on both charged and recombination-active electron states can be investigated. The efficiency of the method proposed is demonstrated with GaAs substrates passivated by selenium.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
