Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in4H−SiC

Abstract

We report on electronic properties of single- and double-layer stacking faults in $4H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$ and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments reveal key constituents of radiative recombination and also provide firm evidence of nonradiative centers at ${E}_{\mathrm{V}}+0.38\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ responsible for recombination-enhanced mobility of silicon-core partial dislocations. A comprehensive energy level model is proposed allowing for a qualitative description of recombination activity at different types of stacking faults and the corresponding bounding partial dislocations.