Abstract
An approximate model has been developed to extend room temperature neutron transistor gain characterizations to temperature extremes. The model can extrapolate transistor gain specifications without recharacterizing device types for temperature or neutron effects. The simplified model can be inaccurate at low currents and for those transistors where the surface effects are significant. However, the model shows good agreement with experiment over two orders of magnitude in operating current level and can be used as a valuable design/analysis tool. Comparison of neutron degradation data (at room temperature) with the prediction based on transistor gain bandwidth product (fT) can be used to estimate the significance of surface effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
