Abstract
The combined method to investigate the electron spectrum of single n-type --doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the Thomas-Fermi method at flnite temperatures; then the obtained electron potential energy is applied to the iteration procedure with solving the Schrodinger equations for the electron spectrum and the Poisson one for the potential energy. The many-body corrections to the electron spectrum in the quantum well also have been investigated. The combined method demonstrates a rapid convergence. It is shown that that the simple Thomas-Fermi method gives a good approximation for the electron potential energy and for the total electron concentration within the well.
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