Abstract
A combined electric field and near-field scanning optical microscope (EF-NSOM) system has been developed for imaging and modifying surfaces. With a negative bias applied to the conducting scaling probe with respect to the substrate, the EF-NSOM system is used to modify nearly atomically flat n-type oxide-passivated Si( 111) surfaces. The electric-field-induced modification of Si surfaces, similar to that effected by a scanning tunneling microscope or an atomic force microscope, is observed by the near-field scanning optical microscopy as well as by shear-force microseopy.
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