Abstract
Bipolar Junction Transistors (BJTs) are widely used in the presence of ionizing radiation, such as in space or in the surroundings of nuclear reactors. For the application in these fields, the influence of Total Ionization Dose (TID) and Electromagnetic Pulse (EMP) on BJTs should be carefully considered. In this work, for the comprehension of the combined effects of TID and EMP on BJT, a numerical model of a NPN BJT (2N2222) is developed with the semiconductor device simulation software TCAD. The simulated results indicate that the TID of gamma-rays can increase the depletion layer area of the BJT and lead to a reduction of its current gain and that a negative base voltage may in these conditions cause the breakdown of the emitter junction. Therefore, the results obtained indicate that the combined TID and EMP can lower the breakdown voltage of the BJT.
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