Abstract

Mn-doped BiFeO3 films with Mn contents of 5 and 10 mol. % were prepared via a chemical route. A carefully controlled amount of Bi deficiency was introduced to further tune the lattice structure and the functionality of multiferroic BiFeO3. The crystal structure of Bi1−δFe1−xMnxO3 films was investigated by X-ray diffraction and Raman spectra; a rhombohedral-to-orthorhombic phase transition was revealed. The observed double hysteresis loops and two capacitance maxima from polarization vs electric field and capacitance-voltage measurements indicate an antiferroelectric-like behavior. Additionally, the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases in Bi1−δFe1−xMnxO3 films was revealed from the domain structures obtained by piezoelectric force microscopy. The effects of Mn substitution in conjunction with Bi deficiency on the FE-AFE phase transition and electrical behavior of BiFeO3 films are discussed in detail. Meanwhile, magnetic and photoluminescence measurements on the films illustrate that Mn substitution gives rise to the net magnetic moment and the defects induced by both Bi deficiency and Mn substitution influence the electronic structure of BiFeO3 films. This study thus shows a simple and effective way to control the functionalities of BiFeO3 films.

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