Abstract
We report on a calibration-free dynamic carrier lifetime imaging technique yielding spatially resolved carrier lifetime maps of silicon wafers within data acquisition times of seconds. Our approach is based on infrared lifetime mapping (ILM), which exploits the proportionality between the measured infrared emission and the free carrier density. Dynamic ILM determines the lifetime analytically from the signal ratio of infrared camera images recorded directly after turning on an excitation source and after steady-state conditions are established within the sample. We investigate the applicability of dynamic infrared lifetime mapping on silicon wafers with rough surfaces, study the impact of injection dependencies, and examine the technical requirements for measuring low lifetime values in the range of microseconds. While the dynamic ILM approach is suitable for lifetimes exceeding 10μs, a combination with steady-state ILM is required to measure lifetime values in the range of 1μs. The injection dependence does not hamper a correct determination of the carrier lifetime by the dynamic evaluation procedure.
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