Abstract
Abstract Amorphous Si and Ge, subject to mechanical contact with Au, Cu and Ni, have been crystallized under external excitation produced by a CW Ar laser combined with furnace annealing. Compared to simple thermal annealing, a lowering of the crystallization temperature and an increase of the diffusion rate of the metallic components have been observed. By TEM we identified some metastable phases of metal-semiconductor compounds.
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