Abstract
Thorough structural analysis is critical to understanding the effects of device design and modeling on type II superlattice (T2SL) based devices. In this work, structural parameters of T2SL infrared devices were uniquely determined by combining local structural parameters obtained by cross-sectional scanning tunneling microscopy (XSTM) with high resolution x-ray diffraction (HRXRD) spectra. The XSTM results were used to initialize and set tolerances for full dynamical simulation and simultaneous fitting of multiple HRXRD spectra. Using this method, we obtain unique, quantitative description of the superlattice structure, composition, and strain which can be used to evaluate the material effects on device performance.
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