Abstract
ABSTRACTThe combined application of section and projection topography carried out using synchrotron white beam radiation can be a powerful tool for the determination of the three-dimensional configurations of defects in single crystals. In this paper, we present examples of the application of this combination of techniques to the analysis of defect configurations in PVT-grown 4H-SiC wafers cut perpendicular and parallel to the growth axis. Detailed correlation between section and projection topography of threading screw dislocations (TSDs) is presented with particular emphasis being laid on the determination of the signs of the dislocations. Further, information can also be determined regarding the position of the dislocations within the crystal depth. In addition, similar correlation is presented for threading edge dislocations (TEDs) and basal plane dislocations (BPDs). The section topography images of dislocations can comprise direct, intermediary and dynamical contrast and all three types are observed. The application to the study of stacking faults will be also discussed in detail.
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