Combined AES, LEED, SEM and TEM characterizations of CuSi(100) interfaces

Abstract

CuSi(100) interfaces prepared under UHV at different substrate temperatures ( T S) have been characterized using in-situ Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) as well as ex-situ scanning and transmission electron microscopy (SEM, TEM). At room temperature (RT), the film grows in a layer by layer like mode. With increasing T S, the intensity of the Cu M 2,3VV (61 eV) Auger transition decreases and at T S = 500°C no Cu Auger signal could be measured below θ ∼ 100. Yet SEM and TEM observations of these deposits show islands in epitaxial relation with the substrate. It can be determined from TEM images that these islands are covered with a Si skin ( ∼ 50 A ̊ ; thick) and that they are deeply implanted in the Si substrate. This explains the AES measurements.