Combinatorial growth of Mgx Zn1–xO epilayers by chemical vapor deposition

Abstract

AbstractIt was our aim to explore the growth of Mgx Zn1–x O epilayers on ZnO substrates using CVD at substrate temperatures around 650 °C which is considerably lower than necessary for the MOCVD growth which requires substrate temperatures above 900 °C. Metallic precursors (Zn, Mg) were used together with NO2 as oxygen precursor. The Mg content was determined from the shift of longitudinal optical phonon line as a function of the Mg composition. The properties of the films were investigated by low temperature photoluminescence. Epitaxial Mgx Zn1–x O films with fixed Mg compositions required an individual adjustment of the Mg reservoir temperature. We, therefore, explored the possibility of a combinatorial growth i.e. achieving a Mg gradient within one sample. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)