Abstract
A new combination mechanism of recombination – collision-thermal (CT) one – is suggested in the present paper. The corresponding recombination coefficients are calculated for pure and doped Ge samples. Conditions at which the CT recombination mechanism becomes dominant over the Lax cascade mechanism are elucidated. A numerical experiment, which takes into account the combination mechanisms of ionization and recombination and the process of electron transfer by impurity centers, is performed.
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