Abstract
The generation mechanism and structure of columnar etching residues generated in reactive sputter etching of SiO2 and PSG using CF4+H2 are investigated. The slight resist scum, remaining after the resist development step, promotes plasma polymerization. The polymerized film thus formed plays the role of an etching mask, resulting in columnar etching residue generation. These residues are SiO2 and PSG covered with a plasma polymerized film.
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