Abstract
Abstract Varying the stoichiometric parameter x in hydrogenated amorphous silicon carbide alloys (a-Si 1 − x C x :H) allows the optical bandgap to be shifted continuously throughout the entire visible range. Throughout this range, all bandgaps are direct, i.e. efficient optical absorption takes place within thin films with thicknesses of the order of 1 μm. It is shown how the optoelectronic properties of a-Si 1 − x C x :H films and devices on glass substrates can be used in combination with crystalline silicon photosensors to construct different kinds of colour sensing devices. Considering the low-temperature-deposition potential of these alloys, our results suggest that a-Si 1 − x C x :H films are likely to play an important role within emerging thin-film-on-ASIC (TFA) technologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
