Abstract

Huge changes in resistance induced by an external magnetic field, i.e., a colossal magnetoresistance effect, is a long-lived theme of the research due to both fundamental science and device applications. Careful analysis of oxygen-deficient Ca4Mn3O10, synthesized by the citric acid method, establishes a direct correlation between magnetic and electric properties. An electric resistive anomaly at the magnetic ordering temperature of ~115 K supports this correlation. We currently report on a colossal positive magnetoresistance up to ~1300% below the metal-to-insulator transition temperature for oxygen-deficient Ca4Mn3O10. The positive magnetoresistance effect in this system may be attributed to the field-induced carrier localization.

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