Abstract
The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.
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