Abstract
Colossal magnetic moment up to 16.05μB/atom was found in GaN based diluted magnetic semiconductor films, which were fabricated by co-implantation with Cr and Er ions, followed by 800°C annealing process. No secondary phase was detected in our samples within the detection limit of the high resolution X-ray diffractometer. Several new Raman peaks around 300, 360, 663 and 858cm−1 are observed in the implanted and annealed samples, which have been explained reasonably. The colossal magnetic moment may come from the 3d–4f coupling between Cr and Er ions and/or the interaction between bound magnetic polarons formed in our samples, which can be facilitated by higher electron concentration. Cr and Er ions play a complementary role in determining the magnetic anisotropy.
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