Abstract
The electronic conduction through a ${\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}$ thin film is investigated by measurements using dc and pulsed biases. Semiconducting ${\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}$ films sandwiched by electrodes show both hysteretic and asymmetric behaviors in current-voltage characteristics. The observed conduction characteristics exhibit the space-charge-limited-current effect, and the hysteretic behavior can be ascribed to a carrier trapping and detrapping of the trap sites in the manganite. The hysteresis induces a colossal electroresistance (CER) of more than 5000% at room temperature. The CER ratio is independent of the duration time of pulses from an infinite (dc) down to $150\phantom{\rule{0.3em}{0ex}}\mathrm{ns}$, indicating that the carrier filling of all the traps can be completed within a short time.
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