Abstract
Studies of the electron instability effects (EIEs) in structures based in strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in achange of several orders of magnitude in the resistive state of the normal metal–HTSC or normal metal–DM (doped manganite) interface in an electric field under significant currentinjection conditions. The results of studying HTSC- and doped-manganite-based heterojunctions are considered. EIEs in heterostructures are compared with the electric field effect on the properties of an SCES in thin fllms and gate-containing devices. The general features and distinctions in the physics of these ðhenomena are analyzed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
