Abstract
We designed Al-doped CdCu3Ti4O12 ceramics with large dielectric permittivity via a solid-state synthesis process. The dielectric permittivity of CdAlxCu3-xTi4O12 was induced to bring down and the dielectric loss increased upon Al doping. Remarkably, the change of dielectric behaviors are strongly associated with decreased grain boundary resistance. Meanwhile, internal barrier layer capacitor dielectric mechanism was regarded as the origin of the colossal dielectric behaviors combined with the analysis of dielectric responses and complex impedance. This study not only revealed the large dielectric permittivity mechanism of CdAlxCu3-xTi4O12 ceramics but also provided candidate ideas to realize a large dielectric permittivity and a lower dielectric loss in CdCu3Ti4O12 and other related dielectric ceramics.
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