Abstract
The physicochemical properties of a molecule-metal interface, in principle, can play a significant role in tuning the electronic properties of organic devices. In this report, we demonstrate an electrode engineering approach in a robust, reproducible molecular memristor that enables a colossal tunability in both switching voltage (from 130 mV to 4 V i.e. >2500% variation) and current (by ~6 orders of magnitude). This provides a spectrum of device design parameters that can be “dialed-in” to create fast, scalable and ultralow energy organic memristors optimal for applications spanning digital memory, logic circuits and brain-inspired computing.
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