Abstract

The coloration of Ce-doped multicomponent silicate glass (type K509) irradiated by 10 MeV electrons was investigated by absorption spectra, electron paramagnetic resonance and photoluminescence spectra. The results show that non-bridging oxygen hole centers (HC1 and HC2) are induced in K509 glasses after electron irradiation, leading to significant degradation of visible transmission. The concentration of color center grows in an exponential law with the increase of radiation dose at the same dose rate, and decreases in exponential decay law with radiation dose rate at the same total dose. According to photoluminescence spectra, the concentration of Ce ions has a negative correlation with radiation dose, and has a positive correlation with dose rate, which proves the mechanism of radiation-hardness in cerium-doped glasses. Ce ions capturing holes induced by electron irradiation to form Ce inhibits the formation of hole trapped color centers, HC1 and HC2, which avoids additional absorption in visible light range. The energy level diagram of Ce in K509 glasses is also obtained by Gaussian resolution of the broad asymmetric emission spectra of Ce.

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