Abstract
SiO2 single crystals irradiated with 600keV, 2MeV, 4MeV and 95MeV Ar ions using 320kV high voltage Experimental platform (IMP, Lanzhou) and the HIRFL-SFC (Heavy Ion Research Facility in Lanzhou) facility in Lanzhou were investigated by Infrared spectra and fluorescence spectroscopes. PL spectra peaks of silicon dioxide irradiated with 600keV, 2MeV, 4MeV and 95MeV Ar ions were located at 445nm (F2 color center), 570nm (F4 color center) and 650nm (F2+ and F3+ color centers) emission band etc. Using the unified thermal spike model, a combination of the elastic collision spike model and the inelastic thermal spike model based on electronic energy losses derived from the reciprocity approach, it is possible to fully describe the experimental data, which clearly demonstrate a synergy between the nuclear energy loss and the electronic energy loss processes.
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