Abstract
AbstractThe color cathodoluminescence (CL) mode in scanning electron microscopy (SEM) is promising in the study of a variety of defects in single crystals pulled from the melt by the Czochralski method. The regions of homogeneous and heterogeneous capture of impurities and of point and linear defects, which affect the luminescence in the undoped Bi4Ge3O12 (BGO) and doped BGO:V, BGO:Yb, BGO:Cr3+, and BGO:Fe as grown single crystals, were observed. Depending on the doped impurities and dislocation configuration, a change was found in both the intensity and wavelength of CL.
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