Abstract
Abstract The application of colloidal quantum dots for light-emitting devices has attracted considerable attention in recent years, due to their unique optical properties such as size-dependent emission wavelength, sharp emission peak and high luminescent quantum yield. Tremendous efforts have been made to explore quantum dots for light-emission applications such as light-emitting diodes (LEDs) and light converters. The performance of quantum-dots-based light-emitting diodes (QD-LEDs) has been increasing rapidly in recent decades as the development of quantum-dots synthesis, surface-ligand engineering and device-architecture optimization. Recently, the external quantum efficiencies of red quantum-dots LEDs have exceeded 20.5% with good stability and narrow emission peak. In this review, we summarize the recent advances in QD-LEDs, focusing on quantum-dot surface engineering and device-architecture optimization.
Highlights
We summarize the recent advances in quantum dots (QDs)-light-emitting diodes (LEDs), focusing on quantum-dot surface engineering and device-architecture optimization
In order to improve the performance of quantum-dots-based light-emitting diodes (QD-LEDs), great efforts have been made to improve the photoluminescence quantum yield (PLQY) of QDs film, carrier-injection efficiency from carrier-transporting layers to QDs, as well as to reduce interface carrier recombination
A classic device architecture of QD-LEDs is shown in Fig. 1c, which consists of an active emission layer, an electron-transporting layer (ETL) and a hole-transporting layer (HTL)
Summary
Semiconductor colloidal quantum dots (QDs), due to their unique optical properties including narrow and finely tunable emission spectra from the ultraviolet (UV) into the infrared (IR), high photoluminescence quantum yield (PLQY) and solution processability [1,2,3,4,5,6], have attracted intensive interest for solar cells [7,8,9,10,11,12,13], biosensors [14,15], photodetectors [16,17,18,19,20], field-effect transistors [21,22,23], lasers [24,25], light-emitting diodes (LEDs) [26,27,28,29,30,31,32] and displays [30,33,34]. In order to improve the performance of QD-LEDs, great efforts have been made to improve the PLQY of QDs film, carrier-injection efficiency from carrier-transporting layers to QDs, as well as to reduce interface carrier recombination. Effective surface-ligand passivation is critical for colloidal QDs to keep their quantum confinement character and high luminescence quantum yield. In-situ growth of ligands was realized by epitaxy growth of perovskite on QD surface in film, which presented a new platform for reducing defects [48]. QD-LEDs generally utilized QDs embedded in an organic host as the carrier-transporting matrix [49]. This strategy endows QDs with high PLQY in film.
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