Abstract
The results of the magnetic and structural properties of epitaxially grown NiGe thin films on (001) oriented MgO substrate by using molecular beam epitaxy (MBE) have been presented. The XRD measurements showed that the NiGe thin films grown on MgO substrate epitaxially with four-fould rotational crystalline symmetry. In addition, the measurements indicate that the NiGe films were grown on (110)-crystalliographic orientation with respect to (100) direction of the MgO substrate. It has been revealed that the saturation magnetization (Ms) decreases with increasing Ge concentration up to the critical value and then start to increases again at the rate of x = 0.14 in sample of Ni(1-x)Gex. With increasing of the relative Ge concentration, the structural and the magnetic properties of the films evolved into a new pahase with a critical structural order parameter. Also, ferromagnetic resonance measurements show that all magneto-crystalline anisotropy parameters are consistent with this structural critical order. We compared these results with our previous studies about the structural and magnetic properties of the NiGe thin films grown on native oxide Si (001) substrate.
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