Collective cyclotron modes in high-mobility two-dimensional hole systems in GaAs - (Ga, Al)As heterojunctions: II. Experiments at magnetic fields of up to forty Tesla

Abstract

The cyclotron resonance of very high-mobility holes in GaAs - (Ga, Al)As heterojunctions grown on (111), (311) and (100) substrates has been studied in high magnetic fields of up to 40 T. As the temperature is increased from to , the cyclotron resonance is found to shift to lower magnetic fields, the size of shift depending on the cyclotron frequency and the substrate orientation. These observations may be explained using the model of interacting hole subsystems developed by Cole et al.