Abstract
Cold cathodes of diamond films have been investigated for a possible gas discharge application. Diamond film has been known as an effective electron emissive material due to its negative electron affinity (NEA) surface. Diamond material can be a p-type semiconductor if boron (B) is used as an accepter. When using a B-doped p-type diamond as a cathode, the discharge voltage decreased compared with conventional cathode materials such as Ni and stainless steel. Hydrogenation of the diamond surface is essential for the lowering of the discharge voltage. During the discharge, however, the diamond surface was damaged by ion bombardment and resulted in an increase in discharge voltage within a half an hour.
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