Abstract

AbstractA cold cathode line source electron beam system for forming SOI films by zone melt recrystallization is described. Possible advantages gained from using a cold cathode electron beam include the controllability of the beam profile and power level, as well as straight-forward scaling to recrystallization of 6 or 8 inch wafers. A computer-based melt width control procedure incorporating feedback to the line intensity from optical observation of the molten zone is also described. This technique allows direct control and adjustment of the melt zone over widths typically from 1 to 3 mm.

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