Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs

Abstract

Introduction. In x Ga 1−x As is an attractive channel material to replace Si in future generations of n-MOSFETs due to its high electron mobility. Self-aligned contact metallization is needed to realize low parasitic series resistance. Recently, Ni-InGaAs self-aligned contact metallization was reported for InGaAs n-MOSFETs.1, 2 In general, metal-InGaAs compounds could be used as self-aligned contact materials and possibly as source/drain (S/D) materials. In this work, we report the first demonstration of implant-less In 0.53 Ga 0.47 As n-MOSFETs with metallic S/D formed by self-aligned Co-InGaAs metallization technology.