Abstract
A coincidence of reciprocal lattice planes model was developed to calculate the interfacial energy in quasicrystal-crystal epitaxy. This model allows a quantitative description of the interface as opposed to previously employed qualitative models that consider symmetry relations and alignment of rotation axes. Computations were carried out on several types of quasicrystal-crystal systems, namely, the crystalline structures on various surfaces of single quasicrystals (Al-Cu-Fe, Al-Ni-Co, and Al-Cu-Co) caused by ion bombardment, the crystalline thin films grown on quasicrystal substrates, and the quasicrystalline thin films grown on crystalline substrates. This model can also be extended to include quasicrystal-quasicrystal epitaxy.
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