Abstract
Summary form only given. An effort was made to fabricate and characterize monolithic, coherent two-dimensional arrays of grating surface emitting (GSE) lasers emitting in the 0.9-1.1- mu m wavelength region using strained InGaAs/AlGaAs quantum-well lasers. The two-dimensional arrays of GSE distributed Bragg reflector (DBR) lasers were grown on both GaAs and AlGaAs substrates by atmospheric pressure organometallic vapor-phase epitaxy, using a graded-index separate-confinement-heterostructure (GRINSCH) geometry with a single InGaAs strained quantum well. The emitting aperture of these arrays was 0.04 mm by 5.0 mm when a 10*10 section of the wafer was probe tested at 12 A. Typically, the full width half-power of the single-lobed longitudinal far field was about 0.02 degrees . The tested lasing wavelengths of the 10*10 arrays from different wafers ranged from 0.95 and 1.03 mu m. The device is a monolithic, coherent array and performs comparably to previously reported devices based on AlGaAs/GaAs. >
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