Abstract
Relaxation of coherent TO phonons is investigated in bulk GaAs and InP using an infrared time-resolved coherent anti-Stokes Raman scattering technique. Measurements were performed as a function of the crystal temperature in the range 10--300 K permitting determination of the dominant TO phonon relaxation channels. The experimental results are consistent with TO phonon decay into a TA and a LA phonon in GaAs while in InP decay into two identical energy LA phonons dominates at low temperatures.
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