Abstract
We report on the observation of coherent THz plasmons in GaAs using the femtosecond time-resolved pump–probe technique. The samples are GaAs/AlGaAs modulation doped single heterostructures with a depletion field below the 2D-channel in the intrinsic GaAs substrate. For the first time, several coherent oscillations (up to five full periods) are clearly visible in the frequency range of 1.5 to 5 THz. The observed oscillation frequencies increase with increasing carrier densities. Our experimental data are in good agreement with theoretical Ensemble-Monte-Carlo simulations.
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