Abstract
The first coherent Raman electron spin resonance (ESR) results obtained in dilute magnetic semiconductor quantum wells are presented and the sensitivity and selectivity of the coherent Raman-detected ESR (CRESR) technique for probing the local environment of magnetic ions in a semiconductor host is demonstrated. The lineshapes and linewidths that are observed are considered in the context of previous work on bulk Cd1-x,MnxTe alloys and on CdTe/MnTe heterostructures.
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