Abstract
Coherent longitudinal optical and acoustic phonons in GaP Schottky diode are impulsively generated and detected with time-resolved second-harmonic generation. A coherent longitudinal optical (LO) phonon is launched in the near-surface depletion region of GaP. The dephasing time of this coherent LO phonon is ∼10 ps and mainly due to the anharmonic decay into two zone-edge half-energy longitudinal acoustic (LA) phonons. Simultaneously, a coherent LA wave packet is created in the metal–semiconductor interface via transient thermal absorption in the metal thin layer. This acoustic wave packet propagates into the bulk with the sound velocity ∼5.8×105 cm/s of a GaP LA phonon.
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