Abstract
We demonstrate the first low-noise mid-IR frequency comb source using a silicon microresonator. Our observation of strong Raman scattering lines in the generated comb suggests that interplay between Raman and four-wave mixing plays a role in the generated low-noise state. In addition, we characterize, the intracavity comb generation dynamics using an integrated PIN diode, which takes advantage of the inherent three-photon absorption process in silicon.
Highlights
There is significant interest in mid-infrared frequency comb technology for applications in high-resolution spectroscopy and metrology [1,2,3]
This can be experimentally detected in the time domain or by the presence of radio frequency (RF) amplitude noise in the frequency comb arising from the beating of these overlapped minicombs [8, 19]
We investigate the comb generation dynamics in the silicon microresonator for the case in which the pump wavelength is set to 3.07 μm and the reverse-bias voltage on the PIN structure is set to -12 V
Summary
There is significant interest in mid-infrared (mid-IR) frequency comb technology for applications in high-resolution spectroscopy and metrology [1,2,3]. Using a four-wave mixing (FWM) process based on the third-order nonlinearity χ(3) in a microresonator, one can generate a broadband frequency comb using parametric oscillation [4] This has been realized in a number of different material platforms in the near-infrared [5, 6], at telecommunication wavelengths [7,8,9,10,11,12,13] and in the mid-IR [14,15,16,17,18], offering promise for a compact, chip scale comb source in the mid-IR. For a comb generated with sidebands that are multiple mode spacings from the pump laser, the sidebands can generate their own ‘mini-comb’ with a different carrierenvelope offset frequency [19] When these mini-combs merge, the resulting frequency comb lines will be broadened by the existence of multiple comb lines per microresonator resonance. We introduce a novel technique for characterizing the intracavity comb generation dynamics using an integrated PIN diode, which utilizes the free-carriers (FC’s) generated through the inherent three-photon absorption process in silicon
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