Abstract
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.
Highlights
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout
That the defect has a spin quartet manifold of S = 3/228,46 in ground state (GS) and excited state (ES), which are separated by 1.35 eV (916 nm)[47]
Small contrast in optically detected magnetic resonance (ODMR), low photon count rate, limited photon collection efficiency, and the lack of high quantum efficiency near-infrared detectors result in long integration times
Summary
Principle introduce negatively otchfheaPrVDgÀSeMid, RwsihloiiccfohnVwÀSviial(lcValan2t)ceyrinbVeÀS4iHdae-ttSeitcChtee. dFciburysbticPwDleaMttwiRcae.nTtsihttoee (V2) in 4H-SiC provides both, stable deep level energy states in a wide-bandgap host and a spin dependent intersystem crossing (ISC). We tentatively attribute this to a change in the Fermi level in the device caused by charge state and ionization processes of surrounding defects[53]. We further record the Rabi oscillation frequency as a function of RF field strength and observe the expected linear increase (see Fig. 4b) This proves that the PDMR of the VÀSi spin state in SiC allows for coherent spin manipulation and readout of the ground state and fulfills the fundamental requirements for more complex quantum control schemes. This is further corroborated by Hahn echo measurements (see Supplementary Note 5)
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