Coherent Clustering of GdN in Epitaxial GaN:Gd Thin Film

Abstract

ABSTRACTWe present an in-depth transmission electron microscopy (TEM) study about the character of the Gd atom distribution in epitaxial GaN:Gd thin films grown by molecular beam epitaxy. High-resolution TEM (HRTEM) imaging reveals local lattice distortions of dimensions of a few atom planes only. Geometric phase analysis of HRTEM lattice images quantifies the associated displacement field. The results are explained by means of thin coherently strained GdN clusters with platelet shape being located along the basal plane. This is consistent with the observations obtained from strain contrast dark-field TEM images. Theoretically derived structure models provided by calculations based on density functional theory are used to simulate the HRTEM contrast and to determine the corresponding displacement field for matching the experimental data. Best fit is achieved in case of a coherent GdN bi-layer cluster that conclusively reflects the energy favorable configuration. The formation of the platelet clusters is explainable in the framework of spinodal decomposition.