Coherency of the interphase boundary and elastic strain in the epitaxial system Ge/GaAs

Abstract

Examination of elastic strain and dislocation morphology in films and substrates of the Ge/GaAs heterosystem shows no misfit disloaction formation in systems with films thinner than 5 μm that is thirty times greater than Van der Merwe's critical thickness value. Strain in the substrate near an interface exceeds significantly that one expected from the elasticity theory; strain jump on the interface exceeds the mismatch of Ge and GaAs lattice parameters. [Russian Text Ignored].